AI資安組, 電子組

劉志益
Chih-Yi Liu - AI資安組, 電子組

英文名字:Chih-Yi Liu
分  機:15622
電子郵件:cyliu@nkust.edu.tw
學  歷:國立交通大學電子研究所博士 (91.9~94.7)
專  長:

半導體元件與物理
非揮發性記憶體元件
微電子材料
半導體製程技術
低溫共燒陶瓷
微波元件

 

研究室網頁連結

微電子元件與材料實驗室

 

 

學術服務:

1. 2007 年第五屆微電子技術發展與應用研討會會議論文委員

2. 2008 年第六屆微電子技術發展與應用研討會會議論文委員

3. 2009 年第七屆微電子技術發展與應用研討會會議論文委員

4. 2010 年第八屆微電子技術發展與應用研討會會議論文委員

5. 2011 年第九屆微電子技術發展與應用研討會會議論文委員

6. 2012 年第十屆微電子技術發展與應用研討會會議論文委員

7. Reviewer for IEEE Electron Device Letter (2010/05、2010/06、2010/10、2011/01、2011/07、2011/12)

8. Reviewer for Journal of Applied Physics (2010/05)

9. Reviewer for The Fourth International Conference on Genetic and Evolutionary Computing (2010/08)

10. Reviewer for Solid State Electronics (2011/09)

11. Reviewer for IEEE Sensors Journal (2012/02)

 

 

研究方向:

1. 電阻式非揮發性記憶體 (Resistive Random Access Memory)

2. 射頻元件與電路模型 (RF IC)

3. 高介電閘極氧化層元件與物理 (High- k Gate Dielectric)

4. 可調變微波元件 (Tunable Microwave Device)

5. 低溫共燒陶瓷 (Low Temperature Co-fired Ceramic, LTCC)

6. 微波元件 ( Microwave Components)

 

其他研究興趣:

1. 軟性電子 (Flexible Electronics)

2. 半導體量測技術 (Semiconductor Measurement Technique)

3. 太陽能電池 (Solar Cell)

4. 鋁金屬誘發結晶成長矽奈米線之特性研究 (AIC)

 

合作對象:

1. 交通大學電子系所

2. 聯合大學電子系所

3. 國家奈米元件實驗室(南科)

4. 屏科大材料系

 

 

研究計畫

102

電化學式二氧化矽電阻記憶體之切換特性與操作熱穩定性改善(II)

計畫主持人

國科會

101

電化學式二氧化矽電阻記憶體之切換特性與操作熱穩定性改善(I)

計畫主持人

國科會

100

後段製程材料於電阻式記憶體元件與材料之研究(III)

計畫主持人

國科會

99

後段製程材料於電阻式記憶體元件與材料之研究(II)

計畫主持人

國科會

98

後段製程材料於電阻式記憶體元件與材料之研究(I)

計畫主持人

國科會

97

鈦酸鍶鋇薄膜作為可調變微波元件之特性研究

計畫主持人

國科會

96

過渡金屬氧化物薄膜於非揮發性記憶體之應用研究(I)

計畫主持人

國科會

95

三元氧化物記憶薄膜於電阻式記憶體之特性研究

計畫主持人

國科會

       

100

銅摻雜二氧化矽薄膜之記憶特性研究(2/2)

計畫主持人

國家奈米元件實驗室

99

銅摻雜二氧化矽薄膜之記憶特性研究

計畫主持人

國家奈米元件實驗室

98

氧化亞銅薄膜之電阻記憶特性研究

計畫主持人

國家奈米元件實驗室

97

玻璃基板上製作大晶粒多晶矽鍺薄膜之製程研究

計畫主持人

國家奈米元件實驗室

97

鋁金屬誘發結晶成長矽奈米線之特性研究(2/2)

計畫主持人

國家奈米元件實驗室

96

鋁金屬誘發結晶成長矽奈米線之特性研究(1/2)

計畫主持人

國家奈米元件實驗室

       

99

透明矽基電阻式記憶體之製備與特性研究

計畫主持人

高應大

98

氧空缺於電阻式記憶體元件之影響研究

計畫主持人

高應大

97

鈦酸鍶鋇薄膜之熱穩定特性研究

計畫主持人

高應大

96

鈦酸鍶鋇薄膜作為可調微波元件與光學特性探討

計畫主持人

高應大

 

 

教學計劃

100

科學工業園區人才培育補助計畫 :積體電路設計與封裝系統分析

協同主持人

南科管理局

99

科學工業園區人才培育補助計畫 : 積體電路設計與測試

協同主持人

南科管理局

98

科學工業園區人才培育補助計畫 :「積體電路設計與測試」人才培育模組課程

協同主持人

南科管理局

       

98

高科技專利取得與攻防課程推廣計畫

計畫主持人

教育部

97

大學跨學門科學人才培育銜接計畫

計畫主持人

教育部

97

高科技專利取得與攻防課程推廣計畫

計畫主持人

教育部

96

高科技專利取得與攻防課程推廣計畫

計畫主持人

教育部

 

 

國際期刊論文

2002

1. Hang-Ting Lue, Chih-Yi Liu, and Tseung-Yuen Tseng, “An Improved Two-Frequency Method of Capacitance Measurement for the High-k Gate Dielectrics,” IEEE Electron Device Letters, vol. 23, pp.553-555, 2002. (SCI, EI) (NSC-90-2215-E-009-100)

2. Chih-Yi Liu, Hang-Ting Lue and Tseung-Yuen Tseng, “Effects of Nitridation of Silicon and Repeated Spike Heating on the Electrical Properties of SrTiO3 Gate Dielectrics,” Applied Physics Letters, vol. 81, pp.4416-4418, 2002. (SCI) (NSC 90-2215-E009-100)

 

2004

3. Chih-Yi Liu and Tseung-Yuen Tseng, “The Electrical Property of Sputtered SrTiO3 Gate Dielectric,” Journal of the European Ceramic Society, vol. 24, pp.1449-1453, 2004. (SCI) (NSC 90-2215-E009-100)

4. Chih-Yi Liu, Bo-Yang Chen, and Tseung-Yuen Tseng, “Deep Depletion Phenomenon of SrTiO3 Gate Dielectric Capacitor,” Journal of Applied Physics, vol. 95, pp.5602-5607, 2004. (SCI) (NSC 91-2215-E009-066)

5. Kampurath P. Jayadevan, Chih-Yi Liu, and Tseung-Yuen Tseng, “Dielectric Characteristics of Nanocrystalline Ag-Ba0.5Sr0.5TiO3 Composite Thin Films,” Applied Physics Letters, vol. 85, pp.1211-1213, 2004. (SCI) (NSC 91-2212-E009-041)

6. Chih-Yi Liu and Tseung-Yuen Tseng, “Correlation between Deep Depletion and Current-Voltage Saturation of SrTiO3 Gate Dielectric Capacitor,” Ceramics International, vol. 30, pp.1101-1106, 2004. (SCI) (NSC 91-2215-E009-066)

 

2005

7. Chih-Yi Liu, Pei-Hsun Wu, Arthur Wang, Wen-Yueh Jang, Jien-Chen Young, Kuang-Yi Chiu, and Tseung-Yuen Tseng, “Bistable Resistive Switching of a Sputter-Deposited Cr-doped SrZrO3 Memory Film,” IEEE Electron Device Letters, vol. 26, pp.351-353, 2005. (SCI, EI) (NSC 92-2215-E009-016)

8. Kampurath P. Jayadevan, Chih-Yi Liu, and Tseung-Yuen Tseng, “Surface Chemical and Leakage Current Density Characteristics of Ag-Ba0.5Sr0.5TiO3 Nanocomposite Thin Films,” Journal of the American Ceramic Society, vol. 88, pp.2456-2460, 2005. (SCI) (NSC 92-2215-E009-016)

 

2006

9. Chih-Yi Liu, Chun-Chieh Chuang, Jian-Shian Chen, Arthur Wang, Wen-Yueh Jang,Jien-Chen Young, Kuang-Yi Chiu and Tseung-Yuen Tseng, “Memory Effect of Sol-Gel Derived V-doped SrZrO3 Thin Films,” Thin Solid Films, vol. 494, pp.287-290, 2006. (SCI) (NSC 93-2215-E009-048)

10. Chih-Yi Liu, Arthur Wang, Wen-Yueh Jang, and Tseung-Yuen Tseng, “Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes” J. Phys. D: Appl. Phys., vol. 39, pp.1156-1160, 2006. (SCI) (NSC 93-2215-E009-048)

11. Chih-Yi Liu and Tseung-Yuen Tseng*, “Study of SrTiO3 gate dielectric,” Materials Research Society (MRS) Fall Meeting Proceeding, 966E, T12-04, 2006. (EI)

 

2007

12. Chih-Yi Liu and Tseung-Yuen Tseng*, “Resistance Switching Properties of the Sol-Gel Derived SrZrO3 Based Memory Thin Films,” J. Phys. D: Appl. Phys., vol. 40, pp.2157-2161, 2007. (SCI) (NSC 95-2218-E-151-004)

 

2008

13. Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, and Tseung-Yuen Tseng*, “Current Status of Resistive Nonvolatile Memory”, Journal of Electroceramics, vol. 21, pp.61-66, 2008. (SCI)

 

2009

14. Chih-Yi Liu*, Bo-Chang Zhuang, Chun-Hung Lai, and Jyun-Min Lin, “Parasitic Effect of the (Ba,Sr)TiO3 Thin Film for Tunable Microwave Device Application,” Ferroelectrics, vol. 383, pp.119-126, 2009. (SCI) (NSC 96-2221-E-151-054)

15. Chun-Hung Lai*, Chih-Yi Liu, and Tseung-Yuen Tseng, “Conduction Behavior of V-SrZrO3 Thin Film Showing Resistive Switching,” Ferroelectrics, vol. 385, pp.21-26, 2009. (SCI)

 

2010

16. Hung-Yu Wang*, Chih-Yi Liu, and Sheng-Hsiung Chang, “New Nullor-Mirror Equivalences,” AEU-International Journal of Electronics and Communications, vol. 64, pp.828~832, 2010. (SCI) (NSC 97-2221-E-151-047)

17. Chih-Yi Liu*, Xin-Jie Lin, Hung-Yu Wang, and Chun-Hung Lai, “Improved Resistive Switching Dispersion of NiOx Thin Film by Cu-Doping Method,” Japanese Journal of Applied Physics, vol. 49, pp.056507-1~056507-4,2010. (SCI)

18. Chih-Yi Liu* and Jing-Ming Hsu, “Dispersion Improvement of Unipolar Resistive Switching Ni/CuxO/Cu Device by Bipolar Operation Method,” Microelectronic Engineering, vol. 87, pp.2504~2507, 2010. (SCI) (NSC 98-2221-E-151-058)

19. Chih-Yi Liu* and Jing-Ming Hsu, “Effect of Ultraviolet Illumination on the Resistive Switching Properties of CuxO Thin Film,” Japanese Journal of Applied Physics, vol. 49, pp.084202-1~084202-3, 2010. (SCI) (NSC 98-2221-E-151-058)

 

2011

20. Chih-Yi Liu*, Yung-Hung Huang, Jen-Yen Ho, and Chun-Chieh Huang,”Retention Mechanism of Cu-doped SiO2-based Resistive Memory,” Journal of Physics D: Applied Physics, vol. 44, pp.205103-1~205103-4, 2011.(SCI) (NSC 99-2221-E-151-065)

21. Chih-Yi Liu*, Yu-Chen Li, Chun-Hung Lai, and Shih-Kun Liu “Influence of SiO2 Layer on Resistive Switching Properties of SiO2/CuxO Stack Structure ” Materials Science Forum, vol. 687, pp.106-111, 2011. (EI) (NSC 98-2221-E-151-058)

22. Chih-Yi Liu*, Po-Wei Sung, Chun-Hung Lai, and Hung-Yu Wang “Resistive Switching Characteristics of Cu/SiO2/Pt Structure” Materials Science Forum, vol. 687, pp.167-173, 2011. (EI) (NSC 98-2221-E-151-058)

23. Chun-Hung Lai*, Chia-Hung Chen, and Chih-Yi Liu, “Resistive switching and current conduction for thermally grown NiO thin film,” Materials Science Forum, vol. 687, pp.163-166, 2011. (EI)

24. Chih-Yi Liu, Min-Hang Weng*, and Jyun-Min Lin, “Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-implanted Surface Passivated High-Resistivity Silicon,” IEEE Microwave and Wireless Components Letters, vol. 21, pp.365-367, 2011. (SCI) (NSC 98-2221-E-151-058)

25. Chih-Yi Liu* and Po-Wei Sung, “Different Resistive Switching Characteristics of a Cu/SiO2/Pt Structure,” Japanese Journal of Applied Physics, vol. 50, pp.091101, 2011. (SCI) (NSC 99-2221-E-151-065)

 

2012

26. Chih-Yi Liu*, Jen-Yen Ho, Jyun-Jie Huang, and Hung-Yu Wang, “Transient Current of Resistive Switching of a NiOx Resistive Memory” Japanese Journal of Applied Physics, vol. 51, pp.041101, 2012. (SCI)

27. Chun-Hung Lai*, Yi-Mu Lee, Ching-Fang Tseng, and Chih-Yi Liu “Resistance Transition in NiO Thin Film and Its Temperature Dependence,” Ferroelectrics, 435, 155-160, 2012. (SCI)

 

2013

28. Chih-Yi Liu*, Jyun-Jie Huang, and Chun-Hung Lai, “Resistive Switching Characteristics of a Pt Nanoparticle-Embedded SiO2-based Memory,” Thin Solid Films, 529,107-110, 2013.(SCI)

29. Chun-Hung Lai*, Chih-Yi Liu, Cheng-Hsing Hsu, Yi-Mu Lee, Jenn-Sen Lin, and Hsiwen Yang “Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin film” Thin Solid Films, 529, 430-434,2013 (SCI)

30. Chih-Yi Liu*, Ya-Ru Shih, and Shyh-Jer Huang, “Resistive Switching Characteristics of a Transparent ITO/SiO2/ITO Structure Fabricated at Room Temperature” Solid State Communications,159,13-17, 2013. (SCI)

31. Chih-Yi Liu*, Jyun-Jie Huang, Chun-Hung Lai, and Chao-Han Lin, “Influence of Embedding Cu Nano-particles into a Cu/SiO2/Pt Structure on its Resistive Switching,” Nanoscale Research Letters, 8, 156, 2013 (SCI)

32. Wei-Chun Lin, Hung-Yu Wang*, Chih-Yi Liu, Tsair-Fwu Lee, “Symbolic analysis of active device containing differencing voltage or current characteristics,” Microelectronics Journal, 44, 354-358, 2013. (SCI)

33. Chih-Yi Liu*, Yueh-Ying Tsai, Shih-Kun Liu, and Yung-Hung Huang, “Retention Failure Mechanism for Low-Resistance-States of Cu-doped SiO2 Resistive Memory” Ferroelectrics (Accepted) (SCI)

34. Chih-Yi Liu*, Chao-Han Lin, Jyun-Jie Huang, and Jen-Yen Ho, “Simulation of the Transient Current of NiO Resistive Memory during the Switching Process,” Ferroelectrics (Accepted) (SCI)

35. Chun-Hung Lai*, Chih-Yi Liu, and His-Wen Yang, “Current and capacitance properties of Ti/ZrO2/Pt structure with resistive switching,” Ferroelectrics (Accepted) (SCI)

36. Hung-Yu Wang, Chih-Yi Liu*, Jyun-Jie Huang, and Tzu-Yi Yang, “Integration of a Humidity Sensor into a CMOS Process,” Sensor Letters (Accepted) (SCI)

37. Chih-Yi Liu*, Bing-Guang Tsai, and Min-Hang Weng, and Shyh-Jer Huang “Influence of B2O3 Additive on Microwave Dielectric Properties of Li2ZnTi3O8 Ceramics for LTCC Applications” International Journal of Applied Ceramic Technology (In Press) (SCI).

 

國際會議論文

2002

1. Chih-Yi Liu and Tseung-Yuen Tseng*, “Electrical properties of SrTiO3 gate dielectric,” Abstract of Electroceramics VIII, Roma, Aug. 25-28, 2002.

 

2003

2.Chih-Yi Liu and Tseung-Yuen Tseng*, “Correlation between Deep Depletion and Current-Voltage Saturation of SrTiO3 Gate Dielectric Capacitor,” Abstract of International Conference on Materials for Advanced Technology (ICMAT), Singapore, Dec. 7-12, 2003.

 

2005

3. Chih-Yi Liu, Chun-Chieh Chuang, Jian-Shian Chen, Arthur Wang, Wen-Yueh Jang,Jien-Chen Young, Kuang-Yi Chiu, and Tseung-Yuen Tseng*, “Memory Effect of Sol-Gel Derived V-doped SrZrO3 Thin Films,” The International Conference On Metallurgical Coatings And Thin Films (ICMCTF), H3-8, San Diego, California, USA, May 2-6, 2005.

4. Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, and Tseung-Yuen Tseng*, “Current status of resistive nonvolatile memories,” 4th Asian Meeting on Electroceramics, Hangzhou, China, Jun. 27-30, 2005.

 

2006

5.  Chih-Yi Liu and Tseung-Yuen Tseng*, “Study of SrTiO3 gate dielectric,” MRS Fall Meeting, T12.4, Boston, MA, USA, Nov 27 – Dec 1, 2006.

 

2007

6.  Chun-Hung Lai*, Chih-Yi Liu, C. H. Hsu, and Tseung-Yuen Tseng, “Resistive Switching Behavior in V-SrZrO3 Sputter-Deposited Thin Films,” The International Conference on Metallurgical Coatings and Thin Films (ICMCTF),San Diego, California, USA, Apr. 23-27, 2007.

 

2008

7.  Chih-Yi Liu*, Bo-Chang Zhuang, Chun-Hung Lai, and Jyun-Min Lin, “Parasitic Effect of the (Ba,Sr)TiO3 Thin Film for Tunable Microwave Device Application,” The 6th Asian Meeting on Ferroelectrics (AMF-6), P-3-3-02,Taipei, Taiwan, Aug. 2~6, 2008.

8. Y. J. Wang*, R. Y. Yang, Chih-Yi Liu, and M. H. Weng, “Effect of Annealing Time on the Poly-SiGe by Aluminum Induced Crystallization at a Low Temperature of 400 °C,” 2008 International Symposium on Nano Science and technology, Tainan, Taiwan, Nov. 7, 2008.

 

2009

9. Chih-Yi Liu* and X. J. Lin, “Influences of Size Area and Compliance Current on Resistive Switching Properties with Cu/NiOx/Pt Structure,” International Electron Devices and Materials Symposia (IEDMS), GC34, Taoyuan,Taiwan, Nov. 19-20, 2009.

10. Chih-Yi Liu* and Po-Wei Sung, “Resistive Switching Behaviors of SiO2 Thin Film with Cu Top Electrode,” TACT 2009 International Thin Films Conference, C004-P, Taipei, Taiwan, Dec. 14-16, 2009.

11. Chun-Hung Lai*, Chih-Yi Liu, Y. M. Lee, “Investigation of the turn-on voltage for thermally grown NiO resistive-switching thin film,” TACT 2009 International Thin Films Conference, C062-P, Taipei, Taiwan, Dec. 14-16, 2009.

 

2010

12. Chih-Yi Liu* and Po-Wei Sung, “Investigation of Resistive Switching Characteristics of Cu/SiO2/Pt Structure by Different Operation and Sweeping Methods,” 7th Asian Meeting on Ferroelectricity (AMF-7) and the 7th Asian Meeting on Electroceramics (AMEC-7), Jeju island, Korea, June 28-July 1, 2010.

13. Chun-Hung Lai*, Chia-Hung Chen, Chih-Yi Liu, and Y. M. Lee, “Two bistable conduction states in SiO2 thin film induced by different forming conditions,” 7th Asian Meeting on Ferroelectricity (AMF-7) and the 7th Asian Meeting on Electroceramics (AMEC-7), Jeju island, Korea, June 28-July 1, 2010.

14. Chih-Yi Liu*, Yu-Chen Li, Chun-Hung Lai, and Shih-Kun Liu, “Influence of SiO2 Layer on Resistive Switching Properties of SiO2/CuxO Stack Structure” 11th IUMRS International Conference in Asia, JP10, Qingdao, China,Sep. 25-28, 2010. (Excellent Poster Award)

15. Chih-Yi Liu*, Po-Wei Sung, Chun-Hung Lai, and Hung-Yu Wang “Resistive Switching Characteristics of Cu/SiO2/Pt Structure,” 11th IUMRS International Conference in Asia, JP48, Qingdao, China, Sep. 25-28, 2010.

16. Chun-Hung Lai*, Chia-Hung Chen, and Chih-Yi Liu, “Resistive switching and current conduction for thermally grown NiO thin film,” 11th IUMRS International Conference in Asia, JP40, Qingdao, China, Sep. 25-28, 2010.

 

2011

17. Chih-Yi Liu*, Jyun-Jie Huang, and Chun-Hung Lai, “Resistive Switching Characteristics of a Pt Nanoparticle-Embedded SiO2-based Memory,” TACT 2011 International Thin Films Conference, Kenting, Taiwan, Nov.20-23, 2011.

18. Chun-Hung Lai*, Chih-Yi Liu, Cheng-Hsing Hsu, Yi-Mu Lee, Jenn-Sen Lin, and Hsiwen Yang “Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin film” TACT 2011 International Thin Films Conference, Kenting, Taiwan, Nov.20-23, 2011.

 

國內期刊論文

1. 劉志益, 曾俊元, “應用於微波可調變元件之鐵電薄膜材料,” 中華民國陶業研究學會會刊,第二十二卷,第三期,pp.10~19, 2003.

2. 劉志益, 曾俊元, “電阻式非揮發性記憶體之近期發展,” 電子月刊, vol. 117, pp.182-189, 2005

3. 莊柏昌, 劉志益, “新世代電阻式非揮發性記憶體之技術發展,” 中工高雄會刊, 第15卷, 第三期, pp.31~35, 2008.

 

國內會議論文

1. 莊柏昌, 劉志益*,“鈦酸鍶鋇薄膜應用於可調變微波元件之特性研究”銘傳大學2008國際學術研討會, March, 2008.

2. 許峻銘, 劉志益*, 莊柏昌,“氧化銅薄膜之電阻切換特性研究,” 第六屆微電子技術發展與應用研討會, pp.31~32, May 16, 2008.

3. 林俊名, 林華恩, 黃俊傑, 許峻銘, and 劉志益, “氧化亞銅薄膜之電阻切換特性研究”銘傳大學2009 國際學術研討會, March, 2009.

4. Chih-Yi Liu* and X. J. Lin, “Investigation of the Resistive Switching Properties of the NiOx Thin Film,” Symposium on Nano Device Technology (SNDT), Apr. 29-30, 2009.

5. R. Y. Yang, Y. J. Wang, Chih-Yi Liu, and M. H. Weng, “AFM and Hall analysis of nano gold induced crystallization of amorphous Si-Ge films at different annealing time,” Symposium on Nano Device Technology (SNDT), Apr. 29-30, 2009.

6. 李禹禛, 黃俊傑, and 劉志益*, “電漿氧化法製備氧化銅薄膜之電阻切換特性研究,” 第七屆微電子技術發展與應用研討會, 2009.

7. 鄭博仁,劉志益*, “鈦酸鍶鋇薄膜於電場輔助退火下之特性探討,” 第七屆微電子技術發展與應用研討會, 2009.

8. 賴韋安, 劉志益*, “電漿清洗於改善BGA封裝製程中金線銲接強度之分析,” 第七屆微電子技術發展與應用研討會, 2009.

9. 何任晏, 林新傑, 林華恩, and 劉志益*,利用後金屬退火改善氧化鎳薄膜之電阻切換分散特性,中國材料科學學會年會, 0131, 花蓮, Nov. 26~28, 2009.

10.王昱傑*, 楊茹媛, 劉志益, and 翁敏航, “外加電場與退火製程對奈米鋁誘發非晶矽薄膜成多晶矽之微結構探討,” 中國材料科學學會年會, 0798, 花蓮, Nov. 26~28, 2009.

11. Chih-Yi Liu* and Y. H. Huang, “Resistive Switching Properties of Cu/SiO2/ITO Structure,” Symposium on Nano Device Technology (SNDT), May. 4-5, 2010.

12.施雅茹,許峻銘, and 劉志益*,“熱氧化法製備氧化銅薄膜之電阻記憶特性研究,” 銘傳大學2010國際學術研討會, March, 2010.

13.潘柏勳,蔡岳穎,羅培辰,宋柏緯,and 劉志益*, “二氧化矽薄膜之電阻記憶體溫度特性研究,” 中國材料科學學會年會, 03-0203, 高雄, Nov. 19~20, 2010.

14.Chih-Yi Liu*, B. G. Tsai, and S. H. Liu “Microwave Dielectric Properties of Li2ZnTi3O8 Ceramics” Symposium on Nano Device Technology (SNDT), Apr.21-22,  2011.

15.黃俊傑,施雅茹,黃正耀,康辰瑋, and 劉志益*, “二氧化矽透明電阻式記憶體之特性研究” 第九屆微電子技術發展與應用研討會, 2011.

16.蔡明修, 黃正耀, 康辰瑋, and 劉志益*, “鋁緩衝層對二氧化矽電阻記憶體之特性影響,”  2011電子工程技術研討會, 高雄, Jun. 10, 2011.

17.黃正耀,康辰瑋,施雅茹and 劉志益*, 二氧化矽薄膜應用於透明電阻式記憶體” 2011民生電子研討會,台中, Nov. 11, 2011.

 

物理(一)

電子儀表

半導體製程

實務專題(一)

 

榮譽:

1. 國科會 98 年度大專學生參與專題研究計畫研究創作獎指導老師

2. 中國青島舉辦之第十一屆國際材聯亞洲材料大會 (IUMRS-ICA 2010)

     傑出海報論文獎 (Excellent poster paper Award)

3. 國科會99年度補助獎勵大專院校特殊優秀人才

4. 國科會100年度補助獎勵大專院校特殊優秀人才

5. 國科會101年度補助獎勵大專院校特殊優秀人才

 

 

專利

1. 曾俊元, 劉志益, 吳沛勳, “非揮發性記憶體及其製作方法,” 中華民國專利, 證書號:I246186; 公告日:2005/12/21.

2. 曾俊元, 劉志益, 莊俊傑, “非揮發性記憶體的製造方法,” 中華民國專利, 證書號:I255018, 公告日:2006/5/11

3. Tseung-Yuen Tseng, Chih-Yi Liu, Pei-Hsun Wu, “Nonvolatile memory and fabrication method thereof,” US patent: US7323733B2, 公告日:2008/1/29

4. T. Y. Tseng, Chih-Yi Liu, C. C. Chuang, “Method for Non-volatile Memory Fabrication,” US Patent: US7459371, 公告日:2008/12/2